Vishay Semiconductor Diodes Division - RS3DHE3_A/H

KEY Part #: K6427702

RS3DHE3_A/H Pricing (USD) [378322pcs Stock]

1 pcs$0.10317
1,700 pcs$0.10266

Part Number:: RS3DHE3_A/H

Manufacturer:: Vishay Semiconductor Diodes Division

Detailed description:: DIODE GEN PURP 200V 3A DO214AB. Rectifiers 200 Volt 3.0A 150ns 100 Amp IFSM

Manufacturer's standard lead time:: In stock

Shelf life:: One Year

Chip From:: Hong Kong

RoHS:

Payment method:

Shipment way:

Family Categories:: KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Diodes - RF, Diodes - Rectifiers - Single, Transistors - Programmable Unijunction, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers and Thyristors - SCRs ...

Competitive Advantage:: We specialize in Vishay Semiconductor Diodes Division RS3DHE3_A/H electronic components. RS3DHE3_A/H can be shipped within 24 hours after order. If you have any demands for RS3DHE3_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

RS3DHE3_A/H Product Attributes

Part Number : RS3DHE3_A/H

Manufacturer : Vishay Semiconductor Diodes Division

Description : DIODE GEN PURP 200V 3A DO214AB

Series : Automotive, AEC-Q101

Part Status : Active

Diode Type : Standard

Voltage - DC Reverse (Vr) (Max) : 200V

Current - Average Rectified (Io) : 3A

Voltage - Forward (Vf) (Max) @ If : 1.3V @ 2.5A

Speed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 150ns

Current - Reverse Leakage @ Vr : 10µA @ 200V

Capacitance @ Vr, F : 44pF @ 4V, 1MHz

Mounting Type : Surface Mount

Package / Case : DO-214AB, SMC

Supplier Device Package : DO-214AB (SMC)

Operating Temperature - Junction : -55°C ~ 150°C

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