IPD082N10N3GATMA1 Pricing (USD) [122049pcs Stock]
- 1 pcs$0.30306
- 2,500 pcs$0.30167
- Part Number:
- IPD082N10N3GATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 80A TO252-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPD082N10N3GATMA1 electronic components. IPD082N10N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPD082N10N3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD082N10N3GATMA1 Product Attributes
Part Number :
IPD082N10N3GATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 80A TO252-3
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
8.2 mOhm @ 73A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3980pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO252-3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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