BSC097N06NSTATMA1 Pricing (USD) [238787pcs Stock]
- 1 pcs$0.15490
- Part Number:
- BSC097N06NSTATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- DIFFERENTIATED MOSFETS.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSC097N06NSTATMA1 electronic components. BSC097N06NSTATMA1 can be shipped within 24 hours after order. If you have any demands for BSC097N06NSTATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC097N06NSTATMA1 Product Attributes
Part Number :
BSC097N06NSTATMA1
Manufacturer :
Infineon Technologies
Description :
DIFFERENTIATED MOSFETS
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
13A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
9.7 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id :
3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1075pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
3W (Ta), 43W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TDSON-8
Package / Case :
8-PowerTDFN
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