Taiwan Semiconductor Corporation - TSM120N10PQ56 RLG

KEY Part #: K6401275

[3106pcs Stock]


    Part Number:
    TSM120N10PQ56 RLG
    Manufacturer:
    Taiwan Semiconductor Corporation
    Detailed description:
    MOSFET N-CH 100V 58A 8PDFN.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Diodes - Zener - Single, Diodes - RF, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays and Transistors - IGBTs - Modules ...
    Competitive Advantage:
    We specialize in Taiwan Semiconductor Corporation TSM120N10PQ56 RLG electronic components. TSM120N10PQ56 RLG can be shipped within 24 hours after order. If you have any demands for TSM120N10PQ56 RLG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TSM120N10PQ56 RLG Product Attributes

    Part Number : TSM120N10PQ56 RLG
    Manufacturer : Taiwan Semiconductor Corporation
    Description : MOSFET N-CH 100V 58A 8PDFN
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 58A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 12 mOhm @ 30A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 145nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 3902pF @ 30V
    FET Feature : -
    Power Dissipation (Max) : 36W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-PDFN (5x6)
    Package / Case : 8-PowerTDFN

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