Vishay Semiconductor Diodes Division - VS-FB190SA10

KEY Part #: K6397378

VS-FB190SA10 Pricing (USD) [3077pcs Stock]

  • 1 pcs$13.40790
  • 10 pcs$12.36594
  • 25 pcs$11.81026
  • 100 pcs$10.55981
  • 250 pcs$10.07348

Part Number:
VS-FB190SA10
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
MOSFET N-CH 100V 190A SOT227.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-FB190SA10 electronic components. VS-FB190SA10 can be shipped within 24 hours after order. If you have any demands for VS-FB190SA10, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-FB190SA10 Product Attributes

Part Number : VS-FB190SA10
Manufacturer : Vishay Semiconductor Diodes Division
Description : MOSFET N-CH 100V 190A SOT227
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 190A
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 180A, 10V
Vgs(th) (Max) @ Id : 4.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 250nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 10700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 568W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227
Package / Case : SOT-227-4, miniBLOC