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  5. JAN1N4454-1

Microsemi Corporation - JAN1N4454-1

KEY Part #: K6433381

JAN1N4454-1 Pricing (USD) [123216pcs Stock]

  • 1 pcs$0.30018
  • 1,112 pcs$0.29366
Part Number:
JAN1N4454-1
Manufacturer:
Microsemi Corporation
Detailed description:
DIODE GEN PURP 50V 200MA DO35. Diodes - General Purpose, Power, Switching Switching Diode
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Microsemi Corporation JAN1N4454-1 electronic components. JAN1N4454-1 can be shipped within 24 hours after order. If you have any demands for JAN1N4454-1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N4454-1 Product Attributes

Part Number : JAN1N4454-1
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 50V 200MA DO35
Series : Military, MIL-PRF-19500/144
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 50V
Current - Average Rectified (Io) : 200mA
Voltage - Forward (Vf) (Max) @ If : 1V @ 10mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Current - Reverse Leakage @ Vr : 100nA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : DO-204AH, DO-35, Axial
Supplier Device Package : DO-35
Operating Temperature - Junction : -55°C ~ 175°C

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