Manufacturer :
ON Semiconductor
Description :
IGBT 650V 120A 306W TO-3PN
IGBT Type :
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) :
650V
Current - Collector (Ic) (Max) :
120A
Current - Collector Pulsed (Icm) :
180A
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 60A
Switching Energy :
2.46mJ (on), 520µJ (off)
Td (on/off) @ 25°C :
25.6ns/71ns
Test Condition :
400V, 60A, 6 Ohm, 15V
Reverse Recovery Time (trr) :
110ns
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-3P-3, SC-65-3
Supplier Device Package :
TO-3PN