Diodes Incorporated - DMN15H310SE-13

KEY Part #: K6416385

DMN15H310SE-13 Pricing (USD) [162872pcs Stock]

  • 1 pcs$0.22710
  • 2,500 pcs$0.20099

Part Number:
DMN15H310SE-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 150V 2A SOT223.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Transistors - Special Purpose, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Single and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Diodes Incorporated DMN15H310SE-13 electronic components. DMN15H310SE-13 can be shipped within 24 hours after order. If you have any demands for DMN15H310SE-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN15H310SE-13 Product Attributes

Part Number : DMN15H310SE-13
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 150V 2A SOT223
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta), 7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 310 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 405pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1.9W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-223
Package / Case : TO-261-4, TO-261AA

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