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GeneSiC Semiconductor - MSRT20080(A)D

KEY Part #: K6468634

MSRT20080(A)D Pricing (USD) [1194pcs Stock]

  • 1 pcs$36.26045
  • 25 pcs$25.86845
Part Number:
MSRT20080(A)D
Manufacturer:
GeneSiC Semiconductor
Detailed description:
DIODE GEN PURP 800V 200A 3 TOWER. Rectifiers 800V 200A Forward
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor MSRT20080(A)D electronic components. MSRT20080(A)D can be shipped within 24 hours after order. If you have any demands for MSRT20080(A)D, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MSRT20080(A)D Product Attributes

Part Number : MSRT20080(A)D
Manufacturer : GeneSiC Semiconductor
Description : DIODE GEN PURP 800V 200A 3 TOWER
Series : -
Part Status : Active
Diode Configuration : 1 Pair Series Connection
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 800V
Current - Average Rectified (Io) (per Diode) : 200A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 200A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 10µA @ 800V
Operating Temperature - Junction : -55°C ~ 150°C
Mounting Type : Chassis Mount
Package / Case : Three Tower
Supplier Device Package : Three Tower
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