Vishay Semiconductor Diodes Division - UH1B-E3/5AT

KEY Part #: K6446736

UH1B-E3/5AT Pricing (USD) [1664pcs Stock]

  • 7,500 pcs$0.04049

Part Number:
UH1B-E3/5AT
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 1A DO214AC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Single, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division UH1B-E3/5AT electronic components. UH1B-E3/5AT can be shipped within 24 hours after order. If you have any demands for UH1B-E3/5AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UH1B-E3/5AT Product Attributes

Part Number : UH1B-E3/5AT
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 1A DO214AC
Series : -
Part Status : Obsolete
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.05V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 1µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AC, SMA
Supplier Device Package : DO-214AC (SMA)
Operating Temperature - Junction : -55°C ~ 175°C

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