Toshiba Semiconductor and Storage - TPCP8J01(TE85L,F,M

KEY Part #: K6421007

TPCP8J01(TE85L,F,M Pricing (USD) [322487pcs Stock]

  • 1 pcs$0.11469

Part Number:
TPCP8J01(TE85L,F,M
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
X35 PB-FREE POWER MOSFET TRANSIS.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Transistors - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Modules and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TPCP8J01(TE85L,F,M electronic components. TPCP8J01(TE85L,F,M can be shipped within 24 hours after order. If you have any demands for TPCP8J01(TE85L,F,M, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPCP8J01(TE85L,F,M Product Attributes

Part Number : TPCP8J01(TE85L,F,M
Manufacturer : Toshiba Semiconductor and Storage
Description : X35 PB-FREE POWER MOSFET TRANSIS
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 32V
Current - Continuous Drain (Id) @ 25°C : 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 35 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1760pF @ 10V
FET Feature : -
Power Dissipation (Max) : 2.14W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PS-8
Package / Case : 8-SMD, Flat Lead