Taiwan Semiconductor Corporation - TSM100N06CZ C0G

KEY Part #: K6398740

TSM100N06CZ C0G Pricing (USD) [58817pcs Stock]

  • 1 pcs$0.66478

Part Number:
TSM100N06CZ C0G
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
MOSFET N-CHANNEL 60V 100A TO220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - JFETs, Transistors - IGBTs - Single, Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation TSM100N06CZ C0G electronic components. TSM100N06CZ C0G can be shipped within 24 hours after order. If you have any demands for TSM100N06CZ C0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM100N06CZ C0G Product Attributes

Part Number : TSM100N06CZ C0G
Manufacturer : Taiwan Semiconductor Corporation
Description : MOSFET N-CHANNEL 60V 100A TO220
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6.7 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 92nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4382pF @ 30V
FET Feature : -
Power Dissipation (Max) : 167W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3

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