[3152pcs Stock]
- Part Number:
- JAN1N6629U
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- DIODE GEN PURP 800V 1.4A E-MELF.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Arrays and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Microsemi Corporation JAN1N6629U electronic components. JAN1N6629U can be shipped within 24 hours after order. If you have any demands for JAN1N6629U, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JAN1N6629U Product Attributes
Part Number :
JAN1N6629U
Manufacturer :
Microsemi Corporation
Description :
DIODE GEN PURP 800V 1.4A E-MELF
Series :
Military, MIL-PRF-19500/590
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
800V
Current - Average Rectified (Io) :
1.4A
Voltage - Forward (Vf) (Max) @ If :
1.4V @ 1.4A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Current - Reverse Leakage @ Vr :
2µA @ 800V
Capacitance @ Vr, F :
-
Mounting Type :
Surface Mount
Package / Case :
SQ-MELF, E
Supplier Device Package :
D-5B
Operating Temperature - Junction :
-65°C ~ 150°C
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