STGWA60H65DFB Pricing (USD) [15716pcs Stock]
- 1 pcs$2.45470
- 10 pcs$2.20262
- 100 pcs$1.80467
- 500 pcs$1.53628
- 1,000 pcs$1.29566
- Part Number:
- STGWA60H65DFB
- Manufacturer:
- STMicroelectronics
- Detailed description:
- IGBT BIPO 650V 60A TO247-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in STMicroelectronics STGWA60H65DFB electronic components. STGWA60H65DFB can be shipped within 24 hours after order. If you have any demands for STGWA60H65DFB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGWA60H65DFB Product Attributes
Part Number :
STGWA60H65DFB
Manufacturer :
STMicroelectronics
Description :
IGBT BIPO 650V 60A TO247-3
Series :
-
Part Status :
Active
IGBT Type :
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) :
650V
Current - Collector (Ic) (Max) :
80A
Current - Collector Pulsed (Icm) :
240A
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 60A
Power - Max :
375W
Switching Energy :
1.59mJ (on), 900µJ (off)
Input Type :
Standard
Gate Charge :
306nC
Td (on/off) @ 25°C :
66ns/210ns
Test Condition :
400V, 60A, 10 Ohm, 15V
Reverse Recovery Time (trr) :
60ns
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-247-3
Supplier Device Package :
TO-247 Long Leads
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