ON Semiconductor - NTP52N10G

KEY Part #: K6411359

[13818pcs Stock]


    Part Number:
    NTP52N10G
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 100V 60A TO220AB.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Power Driver Modules and Diodes - Rectifiers - Arrays ...
    Competitive Advantage:
    We specialize in ON Semiconductor NTP52N10G electronic components. NTP52N10G can be shipped within 24 hours after order. If you have any demands for NTP52N10G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTP52N10G Product Attributes

    Part Number : NTP52N10G
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 100V 60A TO220AB
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 60A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 30 mOhm @ 26A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 135nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 3150pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 214W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220AB
    Package / Case : TO-220-3