[7564pcs Stock]
- Part Number:
- SIS902DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET 2N-CH 75V 4A PPAK 1212-8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Diodes - Zener - Arrays and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIS902DN-T1-GE3 electronic components. SIS902DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS902DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS902DN-T1-GE3 Product Attributes
Part Number :
SIS902DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2N-CH 75V 4A PPAK 1212-8
Series :
TrenchFET®
Part Status :
Obsolete
FET Type :
2 N-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
75V
Current - Continuous Drain (Id) @ 25°C :
4A
Rds On (Max) @ Id, Vgs :
186 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
175pF @ 38V
Power - Max :
15.4W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
PowerPAK® 1212-8 Dual
Supplier Device Package :
PowerPAK® 1212-8 Dual
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