Vishay Siliconix - SI3529DV-T1-E3

KEY Part #: K6524061

[3957pcs Stock]


    Part Number:
    SI3529DV-T1-E3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET N/P-CH 40V 2.5A 6-TSOP.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs, Transistors - Programmable Unijunction, Thyristors - TRIACs, Diodes - Rectifiers - Arrays and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SI3529DV-T1-E3 electronic components. SI3529DV-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI3529DV-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI3529DV-T1-E3 Product Attributes

    Part Number : SI3529DV-T1-E3
    Manufacturer : Vishay Siliconix
    Description : MOSFET N/P-CH 40V 2.5A 6-TSOP
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : N and P-Channel
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 40V
    Current - Continuous Drain (Id) @ 25°C : 2.5A, 1.95A
    Rds On (Max) @ Id, Vgs : 125 mOhm @ 2.2A, 10V
    Vgs(th) (Max) @ Id : 3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
    Input Capacitance (Ciss) (Max) @ Vds : 205pF @ 20V
    Power - Max : 1.4W
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : SOT-23-6 Thin, TSOT-23-6
    Supplier Device Package : 6-TSOP