FDB86566-F085 Pricing (USD) [77424pcs Stock]
- 1 pcs$0.50503
- Part Number:
- FDB86566-F085
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 60V 110A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays, Diodes - Rectifiers - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDB86566-F085 electronic components. FDB86566-F085 can be shipped within 24 hours after order. If you have any demands for FDB86566-F085, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDB86566-F085 Product Attributes
Part Number :
FDB86566-F085
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 60V 110A D2PAK
Series :
Automotive, AEC-Q101, PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.7 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6655pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
176W (Tj)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK (TO-263AB)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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