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  5. 1N6080US

Microsemi Corporation - 1N6080US

KEY Part #: K6444278

[2504pcs Stock]

    Part Number:
    1N6080US
    Manufacturer:
    Microsemi Corporation
    Detailed description:
    DIODE GEN PURP 100V 2A G-MELF.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single and Diodes - Zener - Arrays ...
    Competitive Advantage:
    We specialize in Microsemi Corporation 1N6080US electronic components. 1N6080US can be shipped within 24 hours after order. If you have any demands for 1N6080US, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    1N6080US Product Attributes

    Part Number : 1N6080US
    Manufacturer : Microsemi Corporation
    Description : DIODE GEN PURP 100V 2A G-MELF
    Series : -
    Part Status : Discontinued at Digi-Key
    Diode Type : Standard
    Voltage - DC Reverse (Vr) (Max) : 100V
    Current - Average Rectified (Io) : 2A
    Voltage - Forward (Vf) (Max) @ If : 1.5V @ 37.7A
    Speed : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 30ns
    Current - Reverse Leakage @ Vr : 10µA @ 100V
    Capacitance @ Vr, F : -
    Mounting Type : Surface Mount
    Package / Case : SQ-MELF, G
    Supplier Device Package : G-MELF (D-5C)
    Operating Temperature - Junction : -65°C ~ 155°C

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