Vishay Semiconductor Diodes Division - EGL34DHE3_A/H

KEY Part #: K6457955

EGL34DHE3_A/H Pricing (USD) [782736pcs Stock]

  • 1 pcs$0.04725

Part Number:
EGL34DHE3_A/H
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 200V 500MA DO213. Rectifiers 0.5A,200V,50NS AEC-Q101 Qualified
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Diodes - RF, Thyristors - TRIACs and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division EGL34DHE3_A/H electronic components. EGL34DHE3_A/H can be shipped within 24 hours after order. If you have any demands for EGL34DHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGL34DHE3_A/H Product Attributes

Part Number : EGL34DHE3_A/H
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 200V 500MA DO213
Series : Automotive, AEC-Q101, Superectifier®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 500mA
Voltage - Forward (Vf) (Max) @ If : 1.25V @ 500mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 5µA @ 200V
Capacitance @ Vr, F : 7pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-213AA (Glass)
Supplier Device Package : DO-213AA (GL34)
Operating Temperature - Junction : -65°C ~ 175°C

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