IRF200B211 Pricing (USD) [80621pcs Stock]
- 1 pcs$0.46409
- 10 pcs$0.41057
- 100 pcs$0.30699
- 500 pcs$0.23806
- 1,000 pcs$0.18794
- Part Number:
- IRF200B211
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 200V 12A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - IGBTs - Modules, Thyristors - TRIACs and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF200B211 electronic components. IRF200B211 can be shipped within 24 hours after order. If you have any demands for IRF200B211, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF200B211 Product Attributes
Part Number :
IRF200B211
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 12A TO-220AB
Series :
HEXFET®, StrongIRFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
170 mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id :
4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
790pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
80W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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