Vishay Siliconix - SI3585DV-T1-GE3

KEY Part #: K6523477

[4152pcs Stock]


    Part Number:
    SI3585DV-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET N/P-CH 20V 2A 6-TSOP.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single and Transistors - FETs, MOSFETs - Arrays ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SI3585DV-T1-GE3 electronic components. SI3585DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3585DV-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI3585DV-T1-GE3 Product Attributes

    Part Number : SI3585DV-T1-GE3
    Manufacturer : Vishay Siliconix
    Description : MOSFET N/P-CH 20V 2A 6-TSOP
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : N and P-Channel
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 2A, 1.5A
    Rds On (Max) @ Id, Vgs : 125 mOhm @ 2.4A, 4.5V
    Vgs(th) (Max) @ Id : 600mV @ 250µA (Min)
    Gate Charge (Qg) (Max) @ Vgs : 3.2nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds : -
    Power - Max : 830mW
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : SOT-23-6 Thin, TSOT-23-6
    Supplier Device Package : 6-TSOP