SCT3030ALGC11 Pricing (USD) [3652pcs Stock]
- 1 pcs$11.45278
- Part Number:
- SCT3030ALGC11
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET NCH 650V 70A TO247N.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Diodes - RF, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor SCT3030ALGC11 electronic components. SCT3030ALGC11 can be shipped within 24 hours after order. If you have any demands for SCT3030ALGC11, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCT3030ALGC11 Product Attributes
Part Number :
SCT3030ALGC11
Manufacturer :
Rohm Semiconductor
Description :
MOSFET NCH 650V 70A TO247N
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
39 mOhm @ 27A, 18V
Vgs(th) (Max) @ Id :
5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs :
104nC @ 18V
Vgs (Max) :
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds :
1526pF @ 500V
FET Feature :
-
Power Dissipation (Max) :
262W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247N
Package / Case :
TO-247-3
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