Rohm Semiconductor - SCT3030ALGC11

KEY Part #: K6402280

SCT3030ALGC11 Pricing (USD) [3652pcs Stock]

  • 1 pcs$11.45278

Part Number:
SCT3030ALGC11
Manufacturer:
Rohm Semiconductor
Detailed description:
MOSFET NCH 650V 70A TO247N.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Rohm Semiconductor SCT3030ALGC11 electronic components. SCT3030ALGC11 can be shipped within 24 hours after order. If you have any demands for SCT3030ALGC11, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SCT3030ALGC11 Product Attributes

Part Number : SCT3030ALGC11
Manufacturer : Rohm Semiconductor
Description : MOSFET NCH 650V 70A TO247N
Series : -
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 18V
Rds On (Max) @ Id, Vgs : 39 mOhm @ 27A, 18V
Vgs(th) (Max) @ Id : 5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs : 104nC @ 18V
Vgs (Max) : +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1526pF @ 500V
FET Feature : -
Power Dissipation (Max) : 262W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247N
Package / Case : TO-247-3