IXYS - IXFA20N50P3

KEY Part #: K6394792

IXFA20N50P3 Pricing (USD) [34636pcs Stock]

  • 1 pcs$1.19850
  • 200 pcs$1.19253

Part Number:
IXFA20N50P3
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 500V 20A TO-263AA.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Thyristors - SCRs, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in IXYS IXFA20N50P3 electronic components. IXFA20N50P3 can be shipped within 24 hours after order. If you have any demands for IXFA20N50P3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFA20N50P3 Product Attributes

Part Number : IXFA20N50P3
Manufacturer : IXYS
Description : MOSFET N-CH 500V 20A TO-263AA
Series : HiPerFET™, Polar3™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 300 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 25V
FET Feature : -
Power Dissipation (Max) : 380W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263 (IXFA)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB