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  5. NVD5890NT4G

ON Semiconductor - NVD5890NT4G

KEY Part #: K6417298

[61060pcs Stock]

    Part Number:
    NVD5890NT4G
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 40V 100A DPAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Diodes - Zener - Single and Transistors - Special Purpose ...
    Competitive Advantage:
    We specialize in ON Semiconductor NVD5890NT4G electronic components. NVD5890NT4G can be shipped within 24 hours after order. If you have any demands for NVD5890NT4G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NVD5890NT4G Product Attributes

    Part Number : NVD5890NT4G
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 40V 100A DPAK
    Series : -
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 40V
    Current - Continuous Drain (Id) @ 25°C : 24A (Ta), 123A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 3.7 mOhm @ 50A, 10V
    Vgs(th) (Max) @ Id : 3.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 100nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 4760pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 4W (Ta), 107W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : DPAK
    Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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