Infineon Technologies - IPB60R060P7ATMA1

KEY Part #: K6417116

IPB60R060P7ATMA1 Pricing (USD) [25182pcs Stock]

  • 1 pcs$1.63663

Part Number:
IPB60R060P7ATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH TO263-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
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Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB60R060P7ATMA1 Product Attributes

Part Number : IPB60R060P7ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH TO263-3
Series : CoolMOS™ P7
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 60 mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id : 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs : 67nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2895pF @ 400V
FET Feature : -
Power Dissipation (Max) : 164W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D²PAK (TO-263AB)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB