Diodes Incorporated - DMT69M8LFV-7

KEY Part #: K6401978

DMT69M8LFV-7 Pricing (USD) [289449pcs Stock]

  • 1 pcs$0.12779
  • 2,000 pcs$0.11355

Part Number:
DMT69M8LFV-7
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 60V 45A POWERDI3333.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - IGBTs - Modules and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Diodes Incorporated DMT69M8LFV-7 electronic components. DMT69M8LFV-7 can be shipped within 24 hours after order. If you have any demands for DMT69M8LFV-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMT69M8LFV-7 Product Attributes

Part Number : DMT69M8LFV-7
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 60V 45A POWERDI3333
Series : Automotive, AEC-Q101
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 9.5 mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 33.5nC @ 10V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 1925pF @ 30V
FET Feature : -
Power Dissipation (Max) : 42W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerDI3333-8
Package / Case : 8-PowerVDFN

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