Part Number :
GA10JT12-247
Manufacturer :
GeneSiC Semiconductor
Description :
TRANS SJT 1.2KV 10A
Technology :
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
140 mOhm @ 10A
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Power Dissipation (Max) :
170W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247AB
Package / Case :
TO-247-3