IRFHM3911TRPBF Pricing (USD) [265278pcs Stock]
- 1 pcs$0.13943
- 4,000 pcs$0.11960
- Part Number:
- IRFHM3911TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 10A PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Thyristors - SCRs, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFHM3911TRPBF electronic components. IRFHM3911TRPBF can be shipped within 24 hours after order. If you have any demands for IRFHM3911TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM3911TRPBF Product Attributes
Part Number :
IRFHM3911TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 10A PQFN
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
3.2A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
115 mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id :
4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
760pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
2.8W (Ta), 29W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PQFN (3x3)
Package / Case :
8-PowerTDFN
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