SIHU6N65E-GE3 Pricing (USD) [107279pcs Stock]
- 1 pcs$0.78603
- 10 pcs$0.70826
- 100 pcs$0.56916
- 500 pcs$0.44267
- 1,000 pcs$0.34695
- Part Number:
- SIHU6N65E-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 650V 6A IPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIHU6N65E-GE3 electronic components. SIHU6N65E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHU6N65E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHU6N65E-GE3 Product Attributes
Part Number :
SIHU6N65E-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 650V 6A IPAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
820pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
78W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
IPAK (TO-251)
Package / Case :
TO-251-3 Long Leads, IPak, TO-251AB
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