STMicroelectronics - STH275N8F7-2AG

KEY Part #: K6396970

STH275N8F7-2AG Pricing (USD) [32962pcs Stock]

  • 1 pcs$1.25035
  • 1,000 pcs$1.05595

Part Number:
STH275N8F7-2AG
Manufacturer:
STMicroelectronics
Detailed description:
MOSFET N-CH 80V 180A H2PAK-2.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Thyristors - TRIACs, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - SCRs ...
Competitive Advantage:
We specialize in STMicroelectronics STH275N8F7-2AG electronic components. STH275N8F7-2AG can be shipped within 24 hours after order. If you have any demands for STH275N8F7-2AG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STH275N8F7-2AG Product Attributes

Part Number : STH275N8F7-2AG
Manufacturer : STMicroelectronics
Description : MOSFET N-CH 80V 180A H2PAK-2
Series : Automotive, AEC-Q101, STripFET™ F7
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.1 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 193nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 13600pF @ 50V
FET Feature : -
Power Dissipation (Max) : 315W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : H2Pak-2
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB