Description :
GANFET TRANS SYM 100V BUMPED DIE
FET Type :
2 N-Channel (Half Bridge)
FET Feature :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
1.7A
Rds On (Max) @ Id, Vgs :
70 mOhm @ 2A, 5V
Vgs(th) (Max) @ Id :
2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs :
0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
75pF @ 50V
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Die