IPI80P04P4L08AKSA1 Pricing (USD) [8809pcs Stock]
- 500 pcs$0.38641
- Part Number:
- IPI80P04P4L08AKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET P-CH TO262-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Thyristors - SCRs, Transistors - IGBTs - Single, Transistors - Programmable Unijunction, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPI80P04P4L08AKSA1 electronic components. IPI80P04P4L08AKSA1 can be shipped within 24 hours after order. If you have any demands for IPI80P04P4L08AKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI80P04P4L08AKSA1 Product Attributes
Part Number :
IPI80P04P4L08AKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH TO262-3
Series :
Automotive, AEC-Q101, OptiMOS™
Part Status :
Obsolete
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
8.2 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs :
92nC @ 10V
Vgs (Max) :
+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds :
5430pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
75W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO262-3-1
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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