Vishay Siliconix - SI7862ADP-T1-E3

KEY Part #: K6396437

SI7862ADP-T1-E3 Pricing (USD) [36484pcs Stock]

  • 1 pcs$1.07172
  • 3,000 pcs$1.00316

Part Number:
SI7862ADP-T1-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 16V 18A PPAK SO-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs, Transistors - Special Purpose and Power Driver Modules ...
Competitive Advantage:
We specialize in Vishay Siliconix SI7862ADP-T1-E3 electronic components. SI7862ADP-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7862ADP-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7862ADP-T1-E3 Product Attributes

Part Number : SI7862ADP-T1-E3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 16V 18A PPAK SO-8
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 16V
Current - Continuous Drain (Id) @ 25°C : 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 3 mOhm @ 29A, 4.5V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 7340pF @ 8V
FET Feature : -
Power Dissipation (Max) : 1.9W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SO-8
Package / Case : PowerPAK® SO-8

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