IXTA36N30P Pricing (USD) [26950pcs Stock]
- 1 pcs$1.68347
- 10 pcs$1.50279
- 100 pcs$1.23229
- 500 pcs$0.94668
- 1,000 pcs$0.79840
- Part Number:
- IXTA36N30P
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 300V 36A TO-263.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in IXYS IXTA36N30P electronic components. IXTA36N30P can be shipped within 24 hours after order. If you have any demands for IXTA36N30P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA36N30P Product Attributes
Part Number :
IXTA36N30P
Manufacturer :
IXYS
Description :
MOSFET N-CH 300V 36A TO-263
Series :
PolarHT™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
300V
Current - Continuous Drain (Id) @ 25°C :
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
110 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2250pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-263 (IXTA)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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