Infineon Technologies - IPW60R160P6FKSA1

KEY Part #: K6398143

IPW60R160P6FKSA1 Pricing (USD) [22373pcs Stock]

  • 1 pcs$1.68788
  • 10 pcs$1.50852
  • 100 pcs$1.23687
  • 500 pcs$0.95019
  • 1,000 pcs$0.80136

Part Number:
IPW60R160P6FKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 600V TO247-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modules, Transistors - JFETs and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPW60R160P6FKSA1 Product Attributes

Part Number : IPW60R160P6FKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 600V TO247-3
Series : CoolMOS™ P6
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 160 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs : 44nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2080pF @ 100V
FET Feature : -
Power Dissipation (Max) : 176W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO247-3
Package / Case : TO-247-3

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