Infineon Technologies - SPB08P06PGATMA1

KEY Part #: K6420525

SPB08P06PGATMA1 Pricing (USD) [205360pcs Stock]

  • 1 pcs$0.18011
  • 1,000 pcs$0.17293

Part Number:
SPB08P06PGATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET P-CH 60V 8.8A TO-263.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs and Transistors - IGBTs - Single ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SPB08P06PGATMA1 Product Attributes

Part Number : SPB08P06PGATMA1
Manufacturer : Infineon Technologies
Description : MOSFET P-CH 60V 8.8A TO-263
Series : SIPMOS®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 300 mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 420pF @ 25V
FET Feature : -
Power Dissipation (Max) : 42W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D²PAK (TO-263AB)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB