Manufacturer :
GeneSiC Semiconductor
Description :
DIODE SCHOTTKY 1.2KV 9.4A TO257
Diode Type :
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) :
1200V
Current - Average Rectified (Io) :
9.4A (DC)
Voltage - Forward (Vf) (Max) @ If :
1.6V @ 10A
Speed :
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) :
0ns
Current - Reverse Leakage @ Vr :
20µA @ 1200V
Capacitance @ Vr, F :
884pF @ 1V, 1MHz
Mounting Type :
Through Hole
Package / Case :
TO-257-3
Supplier Device Package :
TO-257
Operating Temperature - Junction :
-55°C ~ 250°C