Vishay Semiconductor Diodes Division - VS-FC420SA10

KEY Part #: K6394529

VS-FC420SA10 Pricing (USD) [4055pcs Stock]

  • 1 pcs$10.68370

Part Number:
VS-FC420SA10
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
POWER MODULE 100V 435A SOT-227.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays and Power Driver Modules ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-FC420SA10 electronic components. VS-FC420SA10 can be shipped within 24 hours after order. If you have any demands for VS-FC420SA10, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-FC420SA10 Product Attributes

Part Number : VS-FC420SA10
Manufacturer : Vishay Semiconductor Diodes Division
Description : POWER MODULE 100V 435A SOT-227
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 435A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.15 mOhm @ 200A, 10V
Vgs(th) (Max) @ Id : 3.8V @ 750µA
Gate Charge (Qg) (Max) @ Vgs : 375nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 17300pF @ 25V
FET Feature : -
Power Dissipation (Max) : 652W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227
Package / Case : SOT-227-4, miniBLOC