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Microsemi Corporation - APT31M100B2

KEY Part #: K6408975

APT31M100B2 Pricing (USD) [441pcs Stock]

  • 30 pcs$8.28967
Part Number:
APT31M100B2
Manufacturer:
Microsemi Corporation
Detailed description:
MOSFET N-CH 1000V 32A T-MAX.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Modules and Diodes - RF ...
Competitive Advantage:
We specialize in Microsemi Corporation APT31M100B2 electronic components. APT31M100B2 can be shipped within 24 hours after order. If you have any demands for APT31M100B2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT31M100B2 Product Attributes

Part Number : APT31M100B2
Manufacturer : Microsemi Corporation
Description : MOSFET N-CH 1000V 32A T-MAX
Series : POWER MOS 8™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 380 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 260nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 8500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1040W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : T-MAX™ [B2]
Package / Case : TO-247-3 Variant

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