NSBC114EDXV6T1G Pricing (USD) [1171066pcs Stock]
- 1 pcs$0.03158
- 4,000 pcs$0.03056
- 8,000 pcs$0.02751
- 12,000 pcs$0.02445
- 28,000 pcs$0.02292
- Part Number:
- NSBC114EDXV6T1G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- TRANS 2NPN PREBIAS 0.5W SOT563.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Thyristors - TRIACs, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in ON Semiconductor NSBC114EDXV6T1G electronic components. NSBC114EDXV6T1G can be shipped within 24 hours after order. If you have any demands for NSBC114EDXV6T1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSBC114EDXV6T1G Product Attributes
Part Number :
NSBC114EDXV6T1G
Manufacturer :
ON Semiconductor
Description :
TRANS 2NPN PREBIAS 0.5W SOT563
Series :
-
Part Status :
Active
Transistor Type :
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) :
100mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Resistor - Base (R1) :
10 kOhms
Resistor - Emitter Base (R2) :
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) :
500nA
Frequency - Transition :
-
Power - Max :
500mW
Mounting Type :
Surface Mount
Package / Case :
SOT-563, SOT-666
Supplier Device Package :
SOT-563
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