TK35N65W5,S1F Pricing (USD) [13802pcs Stock]
- 1 pcs$4.00596
- Part Number:
- TK35N65W5,S1F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 650V 35A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single and Diodes - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK35N65W5,S1F electronic components. TK35N65W5,S1F can be shipped within 24 hours after order. If you have any demands for TK35N65W5,S1F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK35N65W5,S1F Product Attributes
Part Number :
TK35N65W5,S1F
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 650V 35A TO-247
Series :
DTMOSIV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
95 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs :
115nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 300V
FET Feature :
-
Power Dissipation (Max) :
270W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247
Package / Case :
TO-247-3
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