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  5. APT33GF120B2RDQ2G

Microsemi Corporation - APT33GF120B2RDQ2G

KEY Part #: K6422424

APT33GF120B2RDQ2G Pricing (USD) [4845pcs Stock]

  • 1 pcs$8.94169
  • 10 pcs$7.73120
  • 25 pcs$7.15133
  • 100 pcs$6.57150
  • 250 pcs$5.99167
Part Number:
APT33GF120B2RDQ2G
Manufacturer:
Microsemi Corporation
Detailed description:
IGBT 1200V 64A 357W TMAX.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Microsemi Corporation APT33GF120B2RDQ2G electronic components. APT33GF120B2RDQ2G can be shipped within 24 hours after order. If you have any demands for APT33GF120B2RDQ2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT33GF120B2RDQ2G Product Attributes

Part Number : APT33GF120B2RDQ2G
Manufacturer : Microsemi Corporation
Description : IGBT 1200V 64A 357W TMAX
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 64A
Current - Collector Pulsed (Icm) : 75A
Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 25A
Power - Max : 357W
Switching Energy : 1.315mJ (on), 1.515mJ (off)
Input Type : Standard
Gate Charge : 170nC
Td (on/off) @ 25°C : 14ns/185ns
Test Condition : 800V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -

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