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  5. FQB8N25TM

ON Semiconductor - FQB8N25TM

KEY Part #: K6410665

[14058pcs Stock]

    Part Number:
    FQB8N25TM
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 250V 8A D2PAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules and Transistors - IGBTs - Single ...
    Competitive Advantage:
    We specialize in ON Semiconductor FQB8N25TM electronic components. FQB8N25TM can be shipped within 24 hours after order. If you have any demands for FQB8N25TM, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQB8N25TM Product Attributes

    Part Number : FQB8N25TM
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 250V 8A D2PAK
    Series : QFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 250V
    Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 550 mOhm @ 4A, 10V
    Vgs(th) (Max) @ Id : 5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 530pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 3.13W (Ta), 87W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : D²PAK (TO-263AB)
    Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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