[13181pcs Stock]
- Part Number:
- IRL3303STRRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 38A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Special Purpose, Transistors - IGBTs - Arrays, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Diodes - Rectifiers - Arrays and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRL3303STRRPBF electronic components. IRL3303STRRPBF can be shipped within 24 hours after order. If you have any demands for IRL3303STRRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL3303STRRPBF Product Attributes
Part Number :
IRL3303STRRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 38A D2PAK
Series :
HEXFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
26 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 4.5V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
870pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.8W (Ta), 68W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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