FDMC6686P Pricing (USD) [125031pcs Stock]
- 1 pcs$0.29731
- 3,000 pcs$0.29583
- Part Number:
- FDMC6686P
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CH 20V POWER33.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDMC6686P electronic components. FDMC6686P can be shipped within 24 hours after order. If you have any demands for FDMC6686P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDMC6686P Product Attributes
Part Number :
FDMC6686P
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CH 20V POWER33
Series :
PowerTrench®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
18A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
4 mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
122nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
13200pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
2.3W (Ta), 40W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PQFN (3.3x3.3), Power33
Package / Case :
8-PowerWDFN
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