Infineon Technologies - BSS816NWH6327XTSA1

KEY Part #: K6411807

BSS816NWH6327XTSA1 Pricing (USD) [1173417pcs Stock]

  • 1 pcs$0.03152
  • 3,000 pcs$0.02812

Part Number:
BSS816NWH6327XTSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 20V 1.4A SOT323.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Modules, Thyristors - TRIACs, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules and Transistors - IGBTs - Single ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSS816NWH6327XTSA1 Product Attributes

Part Number : BSS816NWH6327XTSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 20V 1.4A SOT323
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 2.5V
Rds On (Max) @ Id, Vgs : 160 mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id : 0.75V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 2.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 180pF @ 10V
FET Feature : -
Power Dissipation (Max) : 500mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-SOT323-3
Package / Case : SC-70, SOT-323

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