Vishay Siliconix - SI7112DN-T1-GE3

KEY Part #: K6419633

SI7112DN-T1-GE3 Pricing (USD) [122476pcs Stock]

  • 1 pcs$0.30200
  • 3,000 pcs$0.25520

Part Number:
SI7112DN-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 30V 11.3A 1212-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
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Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7112DN-T1-GE3 Product Attributes

Part Number : SI7112DN-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 30V 11.3A 1212-8
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 7.5 mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 2610pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta)
Operating Temperature : -50°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® 1212-8
Package / Case : PowerPAK® 1212-8

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