Infineon Technologies - IPP020N06NAKSA1

KEY Part #: K6399541

IPP020N06NAKSA1 Pricing (USD) [20286pcs Stock]

  • 1 pcs$1.86416
  • 10 pcs$1.66364
  • 100 pcs$1.36405
  • 500 pcs$1.04791
  • 1,000 pcs$0.88378

Part Number:
IPP020N06NAKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 60V 29A TO220-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays, Diodes - Rectifiers - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Infineon Technologies IPP020N06NAKSA1 electronic components. IPP020N06NAKSA1 can be shipped within 24 hours after order. If you have any demands for IPP020N06NAKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP020N06NAKSA1 Product Attributes

Part Number : IPP020N06NAKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 60V 29A TO220-3
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 29A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs : 106nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7800pF @ 30V
FET Feature : -
Power Dissipation (Max) : 3W (Ta), 214W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO220-3
Package / Case : TO-220-3

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