Vishay Siliconix - SQ4961EY-T1_GE3

KEY Part #: K6525185

SQ4961EY-T1_GE3 Pricing (USD) [118801pcs Stock]

  • 1 pcs$0.31134
  • 2,500 pcs$0.26312

Part Number:
SQ4961EY-T1_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET DUAL P-CHAN 60V SO8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Diodes - RF, Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Siliconix SQ4961EY-T1_GE3 electronic components. SQ4961EY-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ4961EY-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ4961EY-T1_GE3 Product Attributes

Part Number : SQ4961EY-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET DUAL P-CHAN 60V SO8
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 4.4A (Tc)
Rds On (Max) @ Id, Vgs : 85 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1140pF @ 25V
Power - Max : 3.3W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO

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